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INTEGRATED CIRCUITS
DATA SHEET
TDA5744; TDA5745 Low power mixers/oscillators for hyperband tuners
Preliminary specification File under Integrated Circuits, IC02 1998 Mar 09
Philips Semiconductors
Preliminary specification
Low power mixers/oscillators for hyperband tuners
FEATURES * Mixers/oscillators for hyperband tuners * Balanced mixer with a common emitter input for VHF (single input) * Balanced mixer with a common base input for UHF (double input) * 4-pin common emitter oscillator for VHF * 4-pin common emitter oscillator for UHF * Electronic band switch * IF amplifier with a low output impedance to drive the SAW filter directly (2 k load) * Low power, low radiation and small size * Pin compatible single-chip synthesizer mixer/oscillator for Full Scale Tuners (FST) are available: TDA6404, TDA6405 and TDA6405A. QUICK REFERENCE DATA SYMBOL VCC ICC Tstg Tamb fi(RF) GV F Vo PARAMETER supply voltage supply current IC storage temperature operating ambient temperature RF input frequency voltage gain noise figure output voltage causing 1% cross modulation in channel VHF band UHF band VHF band UHF band VHF band UHF band VHF band UHF band CONDITIONS operating APPLICATIONS
TDA5744; TDA5745
* Hyperband tuners for Europe using a 2-band mixer/oscillator in a switched concept. GENERAL DESCRIPTION The TDA5744 and TDA5745 are 2-band mixers/oscillators intended for VHF/UHF and hyperband tuners (see Fig.1). The Integrated Circuits (ICs) include two double balanced mixers and two oscillators, for the VHF and UHF band, and an IF amplifier. With proper oscillator application and by using a switchable inductor to split the VHF band into two sub-bands (the full VHF/UHF and hyperband) the TV bands can be covered. Two pins are available between the mixer output and the IF amplifier input to enable IF filtering for improved signal handling. Band selection is made by band switch pin BS.
MIN. 4.5 - -40 -20 45.25 - - - - - -
TYP. 5 58 - - - 27 38 8 8.5 119 118
MAX. 5.5 - +150 +85
UNIT V mA C C
399.25 MHz 855.25 MHz - - - - - - dB dB dB dB dBV dBV
407.25 -
ORDERING INFORMATION TYPE NUMBER TDA5744TS; TDA5745TS PACKAGE NAME SSOP24 DESCRIPTION plastic shrink small outline package; 24 leads; body width 5.3 mm VERSION SOT340-1
1998 Mar 09
2
Philips Semiconductors
Preliminary specification
Low power mixers/oscillators for hyperband tuners
BLOCK DIAGRAM
TDA5744; TDA5745
handbook, full pagewidth
n.c. n.c. n.c. n.c. n.c. IFFIL2 IFFIL1 RFGND
12 (13) 11 (14) 10 (15) 8 (17) 7 (18 ) 6 (19) 5 (20) 4 (21) IF AMPLIFIER (11) 14 (10) 15 (9) 16 (4) 21
TDA5744 (TDA5745)
DC STABILIZER
(12) 13
VCC
IFOUT1 IFOUT2 GND VHFOSCIB1 VHFOSCOC1 VHFOSCOC2 VHFOSCIB2
VHFIN
3 (22)
(3) 22 VHF STAGE VHF MIXER VHF OSCILLATOR (2) 23 (1) 24
BS
9 (16)
ELECTRONIC BAND SWITCH
(8) 17 UHFIN2 UHFIN1 2 (23) 1 (24) UHF STAGE UHF MIXER UHF OSCILLATOR (7) 18 (6) 19 (5) 20
UHFOSCIB1 UHFOSCOC1 UHFOSCOC2 UHFOSCIB2
MGM466
The pin numbers in parenthesis represent the TDA5745.
Fig.1 Block diagram.
1998 Mar 09
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Philips Semiconductors
Preliminary specification
Low power mixers/oscillators for hyperband tuners
PINNING PIN SYMBOL TDA5744 UHFIN1 UHFIN2 VHFIN RFGND IFFIL1 IFFIL2 n.c. n.c. BS n.c. n.c. n.c. VCC IFOUT1 IFOUT2 GND UHFOSCIB1 UHFOSCOC1 UHFOSCOC2 UHFOSCIB2 VHFOSCIB1 VHFOSCOC1 VHFOSCOC2 VHFOSCIB2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 TDA5745 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 UHF input 1 UHF input 2 VHF input RF ground IF filter output 1 IF filter output 2 not connected not connected electronic band switch not connected not connected not connected supply voltage IF amplifier output 1 IF amplifier output 2 ground UHF oscillator base input 1 UHF oscillator collector output 1 UHF oscillator collector output 2 UHF oscillator base input 2 VHF oscillator base input 1 VHF oscillator collector output 1 VHF oscillator collector output 2 VHF oscillator base input 2
TDA5744; TDA5745
DESCRIPTION
1998 Mar 09
4
Philips Semiconductors
Preliminary specification
Low power mixers/oscillators for hyperband tuners
TDA5744; TDA5745
handbook, halfpage
handbook, halfpage
UHFIN1 1 UHFIN2 2 VHFIN 3 RFGND 4 IFFIL1 5 IFFIL2 6
24 VHFOSCIB2 23 VHFOSCOC2 22 VHFOSCOC1 21 VHFOSCIB1 20 UHFOSCIB2 19 UHFOSCOC2
VHFOSCIB2 1 VHFOSCOC2 2 VHFOSCOC1 3 VHFOSCIB1 4 UHFOSCIB2 5 UHFOSCOC2 6
24 UHFIN1 23 UHFIN2 22 VHFIN 21 RFGND 20 IFFIL1 19 IFFIL2
TDA5744TS
n.c. 7 n.c. 8 BS 9 n.c. 10 n.c. 11 n.c. 12
MGM464
TDA5745TS
18 UHFOSCOC1 17 UHFOSCIB1 16 GND 15 IFOUT2 14 IFOUT1 13 VCC UHFOSCOC1 7 UHFOSCIB1 8 GND 9 IFOUT2 10 IFOUT1 11 VCC 12
MGM465
18 n.c. 17 n.c. 16 BS 15 n.c. 14 n.c. 13 n.c.
Fig.2 Pin configuration for TDA5744TS.
Fig.3 Pin configuration for TDA5745TS.
1998 Mar 09
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Philips Semiconductors
Preliminary specification
Low power mixers/oscillators for hyperband tuners
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IO(n) PARAMETER output current of each pin to ground: for TDA5744; pins 1 to 6, 9 and 13 to 24 for TDA5745; pins 1 to 12, 16 and 19 to 24 tsc(max) Tstg Tamb Tj
TDA5744; TDA5745
MIN. - - - -40 -20 -
MAX. -10 -10 10 +150 +85 150
UNIT mA mA s C C C
maximum short-circuit time (all pins to VCC and all pins to GND and RFGND) IC storage temperature operating ambient temperature junction temperature
THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient CONDITIONS in free air VALUE 119 UNIT K/W
CHARACTERISTICS VCC = 5 V; Tamb = 25 C; unless otherwise specified; measured in Fig.11. SYMBOL Supplies VCC ICC Vsw(VHF) Vsw(UHF) Isw(VHF) Isw(UHF) S22 Rs Ls supply voltage supply current VHF band switching voltage UHF band switching voltage VHF band switching current UHF band switching current Vsw(UHF) = 5 V output reflection coefficient real part of Zo = Rs + jLs imaginary part of Zo = Rs + jLs RF input frequency noise figure picture carrier frequency fRF = 50 MHz; see Figs 8 and 9 fRF = 150 MHz; see Figs 8 and 9 fRF = 300 MHz gos optimum source fRF = 50 MHz conductance for noise figure fRF = 150 MHz fRF = 300 MHz magnitude phase 4.5 - 0 3 - - - - - - 5 58 - - - 4.5 -12.5 1.4 81 9.5 5.5 65 2 VCC 2 10 - - - - V mA V V A A PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IF amplifier dB deg nH
VHF mixer (including IF amplifier) fi(RF) F 45.25 - - - - - - - 7 8 9 0.7 0.9 1.5 399.25 MHz 9 10 11 - - - dB dB dB mS mS mS
1998 Mar 09
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Philips Semiconductors
Preliminary specification
Low power mixers/oscillators for hyperband tuners
SYMBOL gi Ci Vo Vi GV PARAMETER input conductance input capacitance CONDITIONS fRF = 45.25 MHz fRF = 399.25 MHz fRF = 45.25 to 399.25 MHz output voltage causing 1% fRF = 45.25 MHz; see Fig.6 cross modulation in channel fRF = 399.25 MHz; see Fig.6 input voltage causing pulling fRF = 399.25 MHz; note 1 in channel (750 Hz) voltage gain fRF = 45.25 MHz; see Fig.4 fRF = 399.25 MHz; see Fig.4 VHF oscillator fosc fosc(V) oscillator frequency oscillator frequency shift with supply voltage oscillator frequency drift with temperature oscillator frequency drift with time phase noise, carrier-to-noise sideband ripple susceptibility of VCC (peak-to-peak value) VCC = 5%; note 2 VCC = 10%; worst case in the frequency range; note 2 T = 25 C without compensation: NP0 capacitors; worst case in the frequency range; note 3 worst case in the frequency range; note 4 100 kHz frequency offset; worst case in the frequency range
TDA5744; TDA5745
MIN. - - - 116 116 - 24.5 24.5
TYP. 0.25 0.5 2 119 119 88 27 27 - 100 200 1300
MAX. - - - - - - 29.5 29.5
UNIT mS mS pF dBV dBV dBV dB dB
84.15 - - -
438.15 MHz 200 - tbf kHz kHz kHz
fosc(T)
fosc(t) osc RSC(p-p)
- -
600 106 40
tbf - -
kHz dBc/Hz mV
VCC = 5 V; worst case in the frequency 15 range; ripple frequency 500 kHz; note 5
UHF mixer (including IF amplifier) fi(RF) F RF input frequency noise figure picture carrier frequency fRF = 407.25 MHz; see Fig.10 fRF = 855.25 MHz; not corrected for image; see Fig.10 Rs Ls Vo Vi GV real part of Zi = Rs + jLs imaginary part of Zi = Rs + jLs fRF = 407.25 MHz fRF = 855.25 MHz fRF = 407.25 MHz fRF = 855.25 MHz 407.25 - - - - - - - 116 114 - 35 35 8 9 30 38 9 6 119 117 78 38 38 855.25 MHz 10 11 - - - - - - - 41 41 dB dB nH nH dBV dBV dBV dB dB
output voltage causing 1% fRF = 407.25 MHz; see Fig.7 cross modulation in channel fRF = 855.25 MHz; see Fig.7 input voltage causing pulling fRF = 855.25 MHz; note 1 in channel (750 Hz) voltage gain fRF = 407.25 MHz; see Fig.4 fRF = 855.25 MHz; see Fig.4
1998 Mar 09
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Philips Semiconductors
Preliminary specification
Low power mixers/oscillators for hyperband tuners
SYMBOL UHF oscillator fosc fosc(V) oscillator frequency oscillator frequency shift with supply voltage oscillator frequency drift with temperature oscillator frequency drift with time phase noise, carrier-to-noise sideband ripple susceptibility of VCC (peak-to-peak value) VCC = 5%; note 2 VCC = 10%; worst case in the frequency range; note 2 T = 25 C; with compensation; worst case in the frequency range; note 3 worst case in the frequency range; note 4 100 kHz frequency offset; worst case in the frequency range PARAMETER CONDITIONS
TDA5744; TDA5745
MIN.
TYP.
MAX.
UNIT
446.15 - - - - - - 30 80 600 200 106 20
894.15 MHz 80 tbf tbf tbf - - kHz kHz kHz kHz dBc/Hz mV
fosc(T) fosc(t) osc RSC(p-p)
VCC = 5 V; worst case in the frequency 15 range; ripple frequency 500 kHz; note 5
Rejection at the IF amplifier output INTCHX INTS02 Notes 1. This is the level of the RF signal (100% amplitude modulated with 11.89 kHz) that causes a 750 Hz frequency deviation on the oscillator signal; it produces sidebands 30 dB below the level of the oscillator signal. 2. The frequency shift is defined as the change of the oscillator frequency when the supply voltage varies from VCC = 5 to 4.5 V or from VCC = 5 to 5.25 V. The oscillator is free-running during this measurement. 3. The frequency drift is defined as the change of the oscillator frequency when the ambient temperature varies from Tamb = 25 to 0 C or from Tamb = 25 to 50 C. The oscillator is free-running during this measurement. 4. The switching on drift is defined as the change of the oscillator frequency between 5 seconds and 15 minutes after switching on. The oscillator is free-running during this measurement. 5. The ripple susceptibility is measured for a 500 kHz ripple at the IF amplifier output using the measurement circuit; the level of the ripple signal is increased until a difference of 53.5 dB between the IF carrier set at 100 dBV and the sideband components is reached. 6. Channel x beat: picture carrier frequency (fpc) and sound carrier frequency (fsc) both at 80 dBV. The rejection of the interfering product fpc(RF) + fsc(RF) - fosc at 35.35 MHz should be >60 dB. 7. Channel S02: fpc is 76.25 MHz at 70 dBV; fosc = 115.15 MHz. The rejection of fosc - 2 x fIF = 37.35 MHz should be >66 dB. channel x beat S02 beat note 6 note 7 60 66 - - - - dBc dBc
1998 Mar 09
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Philips Semiconductors
Preliminary specification
Low power mixers/oscillators for hyperband tuners
TEST AND APPLICATION INFORMATION
TDA5744; TDA5745
handbook, full pagewidth
50
signal source VHFIN IFOUT1
(1)
T
(2)
spectrum analyzer V'meas 50
e
Vmeas V
50
Vi
D.U.T.
IFOUT2
Vo
N1 C
N2
RMS voltmeter
MGK828
(1) N1 is 2 x 5 turns. (2) N2 is 2 turns. The gain is defined as the transducer gain plus the voltage transformation ratio (Tloss) of the transformer. Zi >> 50 Vi = 2 x Vmeas; Vi = 80 dBV. Vo N1 Vo = V'meas + 16 dB (transformer ratio ------- = 5 and transformer loss); GV = 20 log ----Vi N2
Fig.4 Voltage gain (GV) measurement in the VHF band.
handbook, full pagewidth
50
signal source A C UHFIN1 IFOUT1
(1)
T
(2)
spectrum analyzer V'meas 50
e
Vmeas V
50
Vi
HYBRID
D.U.T.
UHFIN2 IFOUT2
Vo
N1 C
N2
B RMS 50 voltmeter
D
MGK829
(1) N1 is 2 x 5 turns. (2) N2 is 2 turns. The gain is defined as the transducer gain plus the voltage transformation ratio (Tloss) of the transformer. Vi = Vmeas; Vi = 70 dBV. Vo N1 Vo = V'meas + 16 dB (transformer ratio ------- = 5 and transformer loss); Gv = 20 log ----- + 1 dB (1 dB = correction for hybrid loss). Vi N2
Fig.5 Voltage gain (GV) measurement in the UHF band.
1998 Mar 09
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Philips Semiconductors
Preliminary specification
Low power mixers/oscillators for hyperband tuners
TDA5744; TDA5745
handbook, full pagewidth
Vmeas
V
50 RMS voltmeter 18 dB attenuator 38.9 MHz
(2)
unwanted signal 50 source A eu AM = 30% HYBRID 50 ew wanted signal source Vi C
FILTER T
(1)
VHFIN IFOUT1 Vo N1 C
modulation analyzer 50
D.U.T.
N2
V V'meas
B
D 50
IFOUT2 RMS voltmeter
MGL275
(1) N1 is 2 x 5 turns. (2) N2 is 2 turns. N1 Zi >> 50 Vi = 2 x Vmeas; V'meas = Vo - 16 dB (transformer ratio ------- = 5 and transformer loss). N2 Wanted input signal Vi = 80 dBV at wanted fRF = 45.25 MHz (399.25 MHz). Measured level of the unwanted output signal Vou causing 1% AM modulation in the wanted output signal; unwanted fRF = 50.75 MHz (404.75 MHz); Vou = V'meas + 16 dB.
Fig.6 Cross modulation measurement in the VHF band.
handbook, full pagewidth
Vmeas
V
50 RMS voltmeter T
(1) (2)
unwanted signal 50 source A eu AM = 30% HYBRID 50 ew wanted signal source Vi C
FILTER 18 dB attenuator 38.9 MHz V modulation analyzer 50 UHFIN1 IFOUT1 Vo N1 C
A
C
N2
HYBRID
D.U.T.
B
D 50 50
B
D
UHFIN2 IFOUT2 RMS voltmeter
MGL276
(1) N1 is 2 x 5 turns. (2) N2 is 2 turns. N1 Vi = Vmeas; V'meas = Vo - 16 dB (transformer ratio ------- = 5 and transformer loss). N2 Wanted input signal Vi = 70 dBV at fRF = 407.25 MHz (855.25 MHz). Measured level of the unwanted output signal Vou causing 1% AM modulation in the wanted output signal; unwanted fRF = 412.75 MHz (860.75 MHz); Vou = V'meas + 16 dB.
Fig.7 Cross modulation measurement in the UHF band.
1998 Mar 09
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Philips Semiconductors
Preliminary specification
Low power mixers/oscillators for hyperband tuners
TDA5744; TDA5745
handbook, full pagewidth
I1 C1
PCB BNC C3
I3
PCB
BNC
L1
C2
plug RIM-RIM
I2
plug RIM-RIM
C4
(a)
(b)
MBE286 - 1
(a) For fRF = 50 MHz: VHF mixer frequency response measured = 57 MHz; loss = 0 dB. Image suppression = 16 dB. C1 = 1 nF; C2 = 2.2 pF. L1 = 7 turns ( 5.5 mm; wire = 0.5 mm). I1 = semi rigid cable (RIM): 5 cm long. (semi rigid cable (RIM); 33 dB/100 m; 50 ; 96 pF/m).
(b) For fRF = 150 MHz: VHF mixer frequency response measured = 150.3 MHz; loss = 1.3 dB. Image suppression = 13 dB. C3 = 1 nF; C4 = 2.2 pF. I2 = semi rigid cable (RIM): 30 cm long. I3 = semi rigid cable (RIM): 5 cm long. (semi rigid cable (RIM); 33 dB/100 m; 50 ; 96 pF/m).
Fig.8 Input circuit for optimum noise figure in the VHF band.
handbook, full pagewidth
NOISE SOURCE
BNC
RIM
VHFIN IFOUT1
T
NOISE FIGURE METER
INPUT CIRCUIT
D.U.T.
IFOUT2
C
MGL277
F = Fmeas - loss (of input circuit) (dB).
Fig.9 Noise figure (F) measurement in the VHF band.
1998 Mar 09
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Philips Semiconductors
Preliminary specification
Low power mixers/oscillators for hyperband tuners
TDA5744; TDA5745
handbook, full pagewidth
NOISE SOURCE
A
C
UHFIN1 IFOUT1
T
NOISE FIGURE METER
HYBRID
D.U.T.
C
B 50
D
UHFIN2 IFOUT2
MGL278
Loss (in hybrid) = 1 dB; F = Fmeas - loss (in hybrid).
Fig.10 Noise figure (F) measurement in the UHF band.
1998 Mar 09
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Philips Semiconductors
Preliminary specification
Low power mixers/oscillators for hyperband tuners
TDA5744; TDA5745
handbook, full pagewidth
P1 UHF1 1 nF P2 UHF2 1 nF P3 VHF 1 nF L3 TOKO 7 km L value/C value 7 6 1 15 pF 2 4 8 D5 VHFL LED-3R D6 VHFH LED-3Y D7 UHF LED-3G R8 330 R10 330 R11 330 J1 J2 J3 J4 n.c. for test purpose only VHFH VHFL UHF PLL n.c. 11 (14) (11) 14 IFOUT1 10 (15) (10) 15 IFOUT2 BS n.c. 3 C11 C13 IFFIL2 15 pF n.c. RFGND 4 (21) (4) 21 VHFOSCIB1 C6 VHFIN 3 (22) (3) 22 C3 UHFIN2 2 (23) (2) 23 VHFOSCOC2 C1 C2 150 pF D1 C4 R21 22 k C9 100 pF R2 22 k D2 BB152 L2 30 nH C5 4.7 nF L4 80 nH C10 4.7 nF R7 22 k D4 BB149 R6 22 k C15 47 pF C18 10 pF R9 4.7 k L5 16 nH L6 30 nH R1 1.5 k R3 22 k D3 R4 1.5 k BA792 R5 2.7 k VHFL VHFH BB149 L1 1 H
UHFIN1
1 (24)
(1) 24
VHFOSCIB2
2.2 pF VHFOSCOC1 C7 2.2 pF C8 2.2 pF IFFIL1 5 (20) (5) 20 UHFOSCIB2 C12 1 pF 6 (19) (6) 19 UHFOSCOC2 C14 1 pF UHFOSCOC1 C16 1 pF 8 (17) (8) 17 UHFOSCIB1 C17 1 pF 9 (16) (9) 16 GND
TDA5744 (TDA5745)
7 (18) (7) 18
for test purpose only C19 1 nF C20 1 nF L9 80 nH L8 80 nH C22 10 nF tuning voltage P6 C24 10 nF R14 22 k C21 18 pF 1 2 3 L7 8 4 7 6 P4
IF OUT
VCC J5 +VCC TR1 BC847B VCC n.c. 12 (13) (12) 13 VCC
R18 1.2 k C27 10 F (16 V) C28 R22 50 P9 Vripple 1 AGND 2 3 4 P8 10 F (16 V) +VCC
R16 22 k
+VCC +5 V
MGM467
+33 V
The pin numbers in parenthesis represent the TDA5745.
Fig.11 Measurement circuit.
1998 Mar 09
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Philips Semiconductors
Preliminary specification
Low power mixers/oscillators for hyperband tuners
Component values for measurement circuit Table 1 Capacitors (all SMD and NP0 unless otherwise specified) VALUE 1 nF 150 pF 1 nF 2.2 pF (N750) 4.7 nF 1 nF 2.2 pF (N750) 2.2 pF (N750) 100 pF (N750) 4.7 nF 15 pF 1 pF (N750) 15 pF 1 pF (N750) 47 pF 1 pF (N750) 1 pF (N750) 10 pF (N750) 1 nF 1 nF 18 pF 10 nF 10 nF 10 F (16 V; electrolytic) 10 F (16 V; electrolytic) Resistors (all SMD) VALUE 1.5 k 22 k 22 k 1.5 k 2.7 k 22 k 22 k 330 4.7 k Table 6 Transistors L3 L7 Table 5 Transformer COMPONENT L1 L2 L4 L5 L6 Table 2 L8 L9 COMPONENT R1 R2 R3 R4 R5 R6 R7 R8 R9 Table 4 Coils COMPONENT D1 D2 D3 D4 D5 D6 D7 IC COMPONENT R10 R11 R14 R16 R18 R21 R22 Table 3
TDA5744; TDA5745
COMPONENT C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 C11 C12 C13 C14 C15 C16 C17 C18 C19 C20 C21 C22 C24 C27 C28
VALUE 330 330 22 k 22 k 1.2 k 22 k 50
Diodes and ICs VALUE BB149 BB152 BA792 BB149 LED-3R LED-3Y LED-3G TDA5744; TDA5745
COMPONENT
VALUE 1 H (inductor) 30 nH 80 nH 16 nH 30 nH 80 nH 80 nH
VALUE 23 turns (TOKO, wire 0.07 mm) N1 = 2 x 5 turns; N2 = 2 turns (TOKO, wire 0.09 mm)
COMPONENT TR1 BC847B
VALUE
1998 Mar 09
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Philips Semiconductors
Preliminary specification
Low power mixers/oscillators for hyperband tuners
INTERNAL PIN CONFIGURATION PIN SYMBOL TDA5744 UHFIN1 UHFIN2 1 2 TDA5745 24 23
1 (24) 2 (23)
MGM468
TDA5744; TDA5745
CONFIGURATION(1)
AVERAGE DC VOLTAGE (V) VHF note 2 1.0 UHF
VHFIN
3
22
3 (22)
1.9
note 2
MGM469
RFGND
4
21
4 (21)
MGM470
0.0
0.0
IFFIL1 IFFIL2
5 6
20 19
(20) 5
6 (19)
3.4
3.4
MGM471
n.c.
7 8 10 11 12
18 17 15 14 13 16 12
not connected
note 2
note 2
BS VCC
9 13
electronic band switch supply voltage
0.0 5.0
5.0 5.0
1998 Mar 09
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Philips Semiconductors
Preliminary specification
Low power mixers/oscillators for hyperband tuners
PIN SYMBOL TDA5744 IFOUT1 IFOUT2 14 15 TDA5745 11 10
TDA5744; TDA5745
CONFIGURATION(1)
AVERAGE DC VOLTAGE (V) VHF 2.2 2.2 UHF
14 (11)
15 (10)
MGM472
GND
16
9
16 (9)
MGM473
0.0
0.0
UHFOSCIB1 UHFOSCOC1 UHFOSCOC2 UHFOSCIB2
17 18 19 20
8 7 6 5
17 (8) 20 (5) (7) 18 (6) 19
note 2
1.9 2.5 2.5 1.9
MGM474
VHFOSCIB1 VHFOSCOC1 VHFOSCOC2 VHFOSCIB2
21 22 23 24
4 3 2 1
21 (4) 24 (1) (3) 22 (2) 23
2.0 2.7 2.7 2.0
note 2
MGM475
Notes 1. The pin numbers in parenthesis represent the TDA5745. 2. Not applicable.
1998 Mar 09
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Philips Semiconductors
Preliminary specification
Low power mixers/oscillators for hyperband tuners
PACKAGE OUTLINE SSOP24: plastic shrink small outline package; 24 leads; body width 5.3 mm
TDA5744; TDA5745
SOT340-1
D
E
A X
c y HE vMA
Z 24 13
Q A2 pin 1 index A1 (A 3) Lp L 1 e bp 12 wM detail X A
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A max. 2.0 A1 0.21 0.05 A2 1.80 1.65 A3 0.25 bp 0.38 0.25 c 0.20 0.09 D (1) 8.4 8.0 E (1) 5.4 5.2 e 0.65 HE 7.9 7.6 L 1.25 Lp 1.03 0.63 Q 0.9 0.7 v 0.2 w 0.13 y 0.1 Z (1) 0.8 0.4 8 0o
o
Note 1. Plastic or metal protrusions of 0.20 mm maximum per side are not included. OUTLINE VERSION SOT340-1 REFERENCES IEC JEDEC MO-150AG EIAJ EUROPEAN PROJECTION
ISSUE DATE 93-09-08 95-02-04
1998 Mar 09
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Philips Semiconductors
Preliminary specification
Low power mixers/oscillators for hyperband tuners
SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "IC Package Databook" (order code 9398 652 90011). Reflow soldering Reflow soldering techniques are suitable for all SSOP packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. Wave soldering Wave soldering is not recommended for SSOP packages. This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices.
TDA5744; TDA5745
If wave soldering cannot be avoided, the following conditions must be observed: * A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. * The longitudinal axis of the package footprint must be parallel to the solder flow and must incorporate solder thieves at the downstream end. Even with these conditions, only consider wave soldering SSOP packages that have a body width of 4.4 mm, that is SSOP16 (SOT369-1) or SSOP20 (SOT266-1). During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
1998 Mar 09
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Philips Semiconductors
Preliminary specification
Low power mixers/oscillators for hyperband tuners
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
TDA5744; TDA5745
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1998 Mar 09
19
Philips Semiconductors - a worldwide company
Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2686, Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998
Internet: http://www.semiconductors.philips.com
SCA57
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
545104/1200/01/pp20
Date of release: 1998 Mar 09
Document order number:
9397 750 02946

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